publications

NOTE: Copyrights for certain articles may have been transferred to the appropriate publishers.  Reprints available from this site are provided for personal research use only.

archival journal publications:

  1. L. Ji, H.-Y. Hsu, X. Li, K. Huang, Y. Zhang, J. C. Lee, A. J. Bard, and E. T. Yu, “Localized dielectric breakdown and antireflection coating in metal–oxide–semiconductor photoelectrodes,” Nature Mater. doi:10.1038/nmat4801 (2016).
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    Supplementary Information file

  2. H. Y. Hsu, L. Ji, M. Du, J. Zhao, E. T. Yu, and A. J. Bard, “Optimization of Lead-free Organic–inorganic Tin Halide Perovskite Semiconductors by Scanning Electrochemical Microscopy,” Electrochimica Acta 220, 205 (2016).
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  3. S. Hu, M. D. McDaniel, A. Posadas, C. Hu, H. W. Wu, E. T. Yu, D. J. Smith, A. A. Demkov, and J. G. Ekerdt, “Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1−xO3,” MRS Communications DOI: 10.1557/mrc.2016.36 (2016).
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    Supplementary Information file
  4. H. Y. Hsu, L. Ji, M. Du, J. Zhao, E. T. Yu, and A. J. Bard, “Optimization of PbI2/MeNH3PbI3 Perovskite Composites by Scanning Electrochemical Microscopy,” J. Phys. Chem. C 120, 19890 (2016).
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    Supporting Information file
  5. C. Hu, M. D. McDaniel, A. Jiang, A. Posadas, A. A. Demkov, J. G. Ekerdt, and E. T. Yu, “A low-leakage epitaxial high-k gate oxide for germanium metal-oxide-semiconductor devices,” ACS Appl. Mater. Interfaces 8, 5416 (2016).
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  6. K. Huang, W. Pan, J. F. Zhu, J. C. Li, N. Gao, C. Liu, L. Ji, E. T. Yu, and J. Kang, “Asymmetric light reflectance from metal nanoparticle arrays on dielectric surfaces,” Sci. Rep. 5, 18331 (2015).
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  7. H.-Y. Hsu, L. Ji, H. S. Ahn, J. Zhao, E. T. Yu, and A. J. Bard, “A liquid junction photoelectrochemical solar cell based on p-type MeNH3PbI3 perovskite with 1.05V open-circuit photovoltage,” J. Am. Chem. Soc. 137, 14758 (2015).
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  8. X. H. Li, P.-C. Li, L. Ji, C. Stender, S. R. Tatavarti, K. Sablon, and E. T. Yu, “Integration of subwavelength optical nanostructures for improved antireflection performance of mechanically flexible GaAs solar cells fabricated by epitaxial liftoff,” Sol. Energy Mater. Solar Cells 143, 567 (2015).
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  9. C. Brennan, J. Nguyen, E. T. Yu, and N. Lu, “Interface adhesion between 2D materials and elastomers measured by buckle delamination,” Adv. Mater. Interfaces 2, 1500176 (2015).
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  10. Z. J. Zhang, D. C. Dillen, E. Tutuc, and E. T. Yu, “Strain and hole gas induced Raman shifts in Ge-SixGe1-x core-shell nanowires using tip-enhanced Raman spectroscopy,” Nano Lett. 15, 4303 (2015).
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    Supporting Information file
  11. K. W. Park, E. M. Krivoy, H. P. Nair, S. R. Bank, and E. T. Yu, “Cross-sectional scanning thermal microscopy of ErAs/GaAs superlattices grown by molecular beam epitaxy,” Nanotechnology 26, 265701 (2015).
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  12. M. D. McDaniel, C. Hu, S. Lu, T. Q. Ngo, A. Posadas, A. Jiang, D. J. Smith, E. T. Yu, A. A. Demkov, and J. G. Ekerdt, “Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications,” J. Appl. Phys. 117, 054101 (2015).
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  13. L. Ji, M. D. McDaniel, S. Wang, A. B. Posadas, X. H. Li, H. Huang, J. C. Lee, A. A. Demkov, A. J. Bard, J. G. Ekerdt, and E. T. Yu, “A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst,” Nature Nanotechnol. 10, 84 (2015).
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    Supplementary Information file
  14. X. Li, P.-C. Li, L. Ji, C. Stender, C. McPheeters, S. R. Tatavarti, K. Sablon, and E. T. Yu, “Subwavelength nanostructures integrated with polymer-packaged III-V solar cells for omnidirectional, broad-spectrum improvement of photovoltaic performance,” Prog. Photovolt: Res. Appl. 23, 1398 (2015).
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  15. V. D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank, “Increased InAs quantum dot size and density using bismuth as a surfactant,” Appl. Phys. Lett. 105, 253104 (2014).
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  16. N. Gao, W. Lin, X. Chen, K. Huang, S. Li, J. Li, H. Chen, X. Yang, L. Ji, E. T. Yu, and J. Kang, “Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection,” Nanoscale 6, 14733 (2014).
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  17. X. H. Li, V. D. Dasika, P.-C. Li, L. Ji, S. R. Bank, and E. T. Yu, “Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths,” Appl. Phys. Lett. 105, 123906 (2014).
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  18. C. Hu, M. D. McDaniel, A. Posadas, A. A. Demkov, J. G. Ekerdt, and E. T. Yu, “Highly controllable and stable quantized conductance and resistive switching mechanism in single-crystal TiO2 resistive memory on silicon,” Nano Lett. 14, 4360 (2014).
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    Supporting Information file
  19. P. C. Li, J. C. Chang, A. LaPorta, and E. T. Yu, “Fabrication of large area birefringent nanocylinders for optical torque wrench via nanosphere lithography,” Nanotechnology 25, 235304 (2014).
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  20. M. D. McDaniel, T. Q. Ngo, A. Posadas, C. Hu, S. Lu, D. J. Smith, E. T. Yu, A. A. Demkov, and J. G. Ekerdt, “A chemical route to monolithic integration of crystalline oxides on semiconductors,” Adv. Mater. Interfaces 1, 1400081 (2014).
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  21. T. Q. Ngo, A. B. Posadas, M. D. McDaniel, C. Hu, J. Bruley, E. T. Yu, A. A. Demkov, and J. G. Ekerdt, “Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si (001) by atomic layer deposition,” Appl. Phys. Lett. 104, 082910 (2014).
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  22. L. Ji, Y.-F. Chang, B. Fowler, Y.-C. Chen, T.-M. Tsai, K.-C. Chang, M.-C. Chen, T.-C. Chang, S. M. Sze, E. T. Yu, and J. C. Lee, “Integrated One Diode – One Resistor Architecture in Nano-Pillar SiOx Resistive Switching Memory by Nano-Sphere Lithography,” Nano Lett. 14, 813 (2014).
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  23. X. H. Li, P. C. Li, D. Z. Hu, D. M. Schaadt, and E. T. Yu, “Angular dependence of light trapping in In0.3Ga0.7As/GaAs quantum-well solar cells,” J. Appl. Phys. 115, 044303 (2014).
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  24. A. K. Satpati, N. Arroyo-Curras, L. Ji, E. T. Yu, and A. J. Bard, “Electrochemical Monitoring of TiO2 Atomic Layer Deposition (ALD) by Chronoamperometry and Scanning Electrochemical Microscopy (SECM),” Chem. Mater. 25, 4165 (2013).
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  25. C. Hu, K. W. Park, A. Posadas, J. L. Jordan-Sweet, A. A. Demkov, and E. T. Yu, “Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures,” J. Appl. Phys. 114, 183909 (2013).
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  26. Y.-F. Chang, L. Ji, Y. Wang, P.-Y. Chen, F. Zhou, F. Xue, B. Fowler, E. T. Yu, and J. C. Lee, “Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory,” Appl. Phys. Lett. 103, 193508 (2013).
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  27. C. Hu, M. D. McDaniel, J. G. Ekerdt, and E. T. Yu, “High ON/OFF Ratio and Quantized Conductance in Resistive Switching of TiO2 on Silicon,” IEEE Electron Device Lett. 34, 1385 (2013).
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  28. P. C. Li and E. T. Yu, “Flexible, low-loss, large-area, wide-angle, wavelength-selective plasmonic multilayer metasurface,” J. Appl. Phys. 114, 133104 (2013).
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  29. P. C. Li and E. T. Yu, “Large-area omnidirectional antireflection coating on low-index materials,” J. Opt. Soc. Am. B 30, 2584 (2013).
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  30. X. H. Li, P. C. Li, D. Z. Hu, D. M. Schaadt, and E. T. Yu, “Light trapping in thin-film solar cells via scattering by nanostructured antireflection coatings,” J. Appl. Phys. 114, 044310 (2013).
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  31. Y.-F. Chang, L. Ji, Z.-J. Wu, F. Zhou, Y. Wang, F. Xue, B. Fowler, E. T. Yu, P. S. Ho, and J. C. Lee, “Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory,” Appl. Phys. Lett. 103, 033521 (2013).
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  32. K. W. Park, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, “Quantitative scanning thermal microscopy of ErAs/GaAs superlattice structures grown by molecular beam epitaxy,” Appl. Phys. Lett. 102, 061912 (2013).
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  33. P. C. Li and E. T. Yu, “Wide-angle wavelength-selective multilayer optical metasurfaces robust to interlayer misalignment,” J. Opt. Soc. Am. B 30, 27 (2013).
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  34. C. O. McPheeters and E. T. Yu, “Computational analysis of thin film InGaAs/G aAs quantum well solar cells with back side light trapping structures,” Opt. Express 20, A864 (2012).
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  35. K. W. Park, V. D. Dasika, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, “Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy,” Appl. Phys. Lett. 100, 233117 (2012).
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  36. C. O. McPheeters, D. Hu, D. M. Schaadt, and E. T. Yu, “Semiconductor heterostructures and optimization of light trapping structures for efficient thin-film solar cells,” J. Opt. 14, 024007 (2012).
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  37. J. H. Yum, G. Bersuker, T. Akyol, D. A. Ferrer, M. Lei, K. W. Park, T. W. Hudnall, M. C. Downer, C. W. Bielawski, E. T. Yu, J. Price, J. C. Lee, and S. K. Banerjee, “Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability Improvement,” IEEE Trans. Electron Devices 58, 4384 (2011).
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  38. P. C. Li, Y. Zhao, A. Alu, and E. T. Yu, “Experimental realization and modeling of a subwavelength frequency-selective plasmonic metasurface,” Appl. Phys. Lett. 99, 221106 (2011).
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  39. K. W. Park, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, “Scanning capacitance microscopy of ErAs nanoparticles embedded in GaAs Pn junctions,” Appl. Phys. Lett. 99, 133114 (2011).
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  40. E. T. Yu and J. van de Lagemaat, “Photon management for photovoltaics,” MRS Bulletin 36, 424 (2011).
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  41. L. Zhu and E. T. Yu, “Ballistic transport and electrical spin signal enhancement in a nanoscale three-terminal spintronic device,” Appl. Phys. Lett. 98, 142115 (2011).
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    Supporting Information file
  42. D. Hu, C. O. McPheeters, E. T. Yu, and D. M. Schaadt, “Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers,” Nanoscale Res. Lett. 6, 83 (2011).
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  43. L. Zhu and E. T. Yu, “Influence of surface treatment and interface layers on electrical spin injection efficiency and transport in InAs,” J. Vac. Sci. Technol. B 28, 1164 (2010).
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  44. W. Melitz, J. Shen, S. Lee, J. S. Lee, A. C. Kummel, R. Droopad, and E. T. Yu, “Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces,” J. Appl. Phys. 108, 023711 (2010).
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  45. L. Q. Wang, E. Yu, Y. Taur, and P. Asbeck, “Design of tunneling field-effect transistors based on staggered heterojunctions for ultralow-power applications,” IEEE Electron Device Lett. 31, 431 (2010).
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  46. J. J. M. Law, E. T. Yu, G. Koblmuller, F. Wu, and J. S. Speck, “Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular-beam epitaxy,” Appl. Phys. Lett. 96, 102111 (2010).
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  47. S. H. Lim and E. T. Yu, “Ultraviolet and solar-blind spectral imaging with subwavelength transmission gratings,” Appl. Phys. Lett. 95, 161107 (2009).
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  48. C. O. McPheeters, C. J. Hill, S. H. Lim, D. Derkacs, D. Z. Ting, and E. T. Yu, “Improved performance of In(Ga)As/GaAs quantum dot solar cells via light scattering by nanoparticles,” J. Appl. Phys. 106, 056101 (2009).
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  49. A. Arriagada, E. T. Yu, and P. Bandaru, “Determination of thermal parameters of one-dimensional nanostructures through a thermal transient method,” J. Therm. Anal. Calorim. 97, 1023 (2009).
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  50. S. Raychaudhuri, S. A. Dayeh, D. Wang, and E. T. Yu, “Precise semiconductor nanowire placement through dielectrophoresis,” Nano Lett. 9, 2260 (2009).
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  51. S. A. Dayeh, E. T. Yu, and D. Wang, “Surface Diffusion and Substrate – Nanowire Adatom Exchange in InAs Nanowire Growth,” Nano Lett. 9, 1967 (2009).
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  52. S. H. Lim, D. Derkacs, and E. T. Yu, “Light scattering into silicon-on-insulator waveguide modes by random and periodic nanodot gold arrays,” J. Appl. Phys. 105, 073101 (2009).
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  53. S. A. Dayeh, D. Susac, K. L. Kavanagh, E. T. Yu, and D. Wang, “Structural and room-temperature transport properties of zincblende and wurtzite InAs nanowires,” Adv. Func. Mater. 19, 2102 (2009).
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  54. J. J. M. Law, S. A. Dayeh, D. Wang, and E. T. Yu, “Scanning capacitance characterization of potential screening in InAs nanowire devices,” J. Appl. Phys. 105, 014306 (2009).
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  55. S. A. Dayeh, E. T. Yu, and D. Wang, “Transport coefficients of InAs nanowires as function of their diameter,” Small 5, 77 (2009).
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  56. S. A. Dayeh, P. Chen, Y. Jing, E. T. Yu, S. S. Lau, and D. Wang, “Vertical integration and electrical isolation of InAs nanowires on insulator on silicon,” Appl. Phys. Lett. 93, 203109 (2008).
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  57. S. A. Dayeh, D. Susac, K. L. Kavanagh, E. T. Yu, and D. Wang, “Field dependent transport properties in InAs nanowire field effect transistors,” Nano Lett. 8, 3114 (2008).
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  58. P. Matheu, S. H. Lim, D. Derkacs, C. McPheeters, and E. T. Yu, “Metal and dielectric nanoparticle scattering for improved optical absorption in photovoltaic devices,” Appl. Phys. Lett. 93, 113108 (2008).
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  59. D. Derkacs, W. V. Chen, P. M. Matheu, S. H. Lim, P. K. L. Yu, and E. T. Yu, “Nanoparticle-induced light scattering for improved performance of quantum-well solar cells,” Appl. Phys. Lett. 93, 091107 (2008).
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  60. C. J. Novotny, E. T. Yu, and P. K. L. Yu, “InP nanowire/polymer hybrid photodiode,” Nano Lett. 8, 775 (2008).
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  61. J. J. M. Law, E. T. Yu, B. A. Haskell, P. T. Fini, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy,” J. Appl. Phys. 103, 014305 (2008).
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  62. S. A. Dayeh, E. T. Yu, and D. Wang, “Growth of InAs nanowires on SiO2 substrates: nucleation, evolution and role of Au nanoparticles,” J. Phys. Chem. C 111, 13331 (2007).
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  63. S. A. Dayeh, E. T. Yu, and D. Wang, “Excess indium and substrate effects on the growth of InAs nanowires,” Small 3, 1683 (2007).
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  64. S. A. Dayeh, E. T. Yu, and D. Wang, “III-V nanowire growth mechanism: V/III ratio and temperature effects,” Nano Lett. 7, 2486 (2007).
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  65. X. Zhou, S. A. Dayeh, D. Wang, and E. T. Yu, “Scanning gate microscopy of InAs nanowires,” Appl. Phys. Lett. 90, 233118 (2007).
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  66. S. A. Dayeh, C. Soci, P. K. L. Yu, E. T. Yu, and D. Wang, “Transport properties of InAs nanowire field-effect transistors: the effects of surface states,” J. Vac. Sci. Technol. B 25, 1432 (2007).
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  67. X. Zhou, S. A. Dayeh, D. Wang, and E. T. Yu, “Analysis of local carrier modulation in InAs nanowire field-effect transistors,” J. Vac. Sci. Technol. B 25, 1427 (2007).
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  68. S. H. Lim, W. Mar, P. Matheu, D. Derkacs, and E. T. Yu, “Photocurrent spectroscopy of optical absorption enhancement in silicon photodiodes via scattering from surface plasmon polaritons in gold nanoparticles,” J. Appl. Phys. 101, 104309 (2007).
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  69. S. A. Dayeh, C. Soci, P. K. L. Yu, E. T. Yu, and D. Wang, “Influence of surface states on the extraction of transport parameters from InAs nanowire field-effect transistors,” Appl. Phys. Lett. 90, 162112 (2007).
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  70. S. A. Dayeh, D. P. R. Aplin, X. Zhou, P. K. L. Yu, E. T. Yu, and D. Wang, “High electron mobility InAs nanowire field-effect transistors,” Small 3, 326 (2007).
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  71. D. Derkacs, S. H. Lim, P. Matheu, W. Mar, and E. T. Yu, “Improved performance of amorphous silicon solar cells via scattering from surface plasmon polaritons in nearby metallic nanoparticles,” Appl. Phys. Lett. 89, 093103 (2006).
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  72. X. Zhou, S. A. Dayeh, D. Aplin, D. Wang, and E. T. Yu, “Direct observation of ballistic and drift carrier transport regimes in InAs nanowires,” Appl. Phys. Lett. 89, 053113 (2006).
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  73. S. Raychaudhuri and E. T. Yu, “Calculation of critical dimensions for wurtzite and cubic zincblende coaxial nanowire heterostructures,” J. Vac. Sci. Technol. B 24, 2053 (2006).
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  74. X. Zhou, S. A. Dayeh, D. Aplin, D. Wang, and E. T. Yu, “Scanned electrical probe characterization of carrier transport behavior in InAs nanowires,” J. Vac. Sci. Technol. B 24, 2036 (2006).
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  75. S. Raychaudhuri and E. T. Yu, “Critical dimensions in coherently strained coaxial nanowire heterostructures,” J. Appl. Phys. 99, 114308 (2006).
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  76. B. S. Simpkins, H. Zhang, and E. T. Yu, “Defects in nitride semiconductors: From nanoscale imaging to macroscopic device behavior,” Mater. Sci. Semicond. Processing, 9, 308 (2006).
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  77. X. Zhou, E. T. Yu, D. S. Green, and J. S. Speck, “Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries,” J. Vac. Sci. Technol. B 24, 245 (2006).
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  78. H. Zhang and E. T. Yu, “Demonstration and analysis of reduced reverse bias leakage current via design of nitride semiconductor heterostructures grown by molecular beam epitaxy,” J. Appl. Phys. 99, 014501 (2006).
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  79. H. Zhang, E. J. Miller, and E. T. Yu, “Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy,” J. Appl. Phys. 99, 023703 (2006).
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  80. X. Zhou, E. T. Yu, D. I. Florescu, J. C. Ramer, D. S. Lee, S. M. Ting, and E. A. Armour, “Imaging of thickness and compositional fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy,” J. Vac. Sci. Technol. B 23, 1808 (2005).
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  81. X. Zhou, E. T. Yu, D. I. Florescu, J. C. Ramer, D. S. Lee, S. M. Ting, and E. A. Armour, “Observation of In concentration variations in InGaN/GaN quantum-well heterostructures by scanning capacitance microscopy,” Appl. Phys. Lett. 86, 202113 (2005).
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  82. D. M. Schaadt, B. Feng, and E. T. Yu, “Enhanced semiconductor optical absorption via surface plasmon excitation in metal nanoparticles,” Appl. Phys. Lett. 86, 063106 (2005).
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  83. X. Zhou, E. T. Yu, D. Florescu, J. C. Ramer, D. S. Lee, and E. A. Armour, “Observation of subsurface monolayer thickness fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy and spectroscopy,” Appl. Phys. Lett. 85, 407 (2004).
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  84. D. M. Schaadt, E. T. Yu, V. Vaithyanathan, and D. G. Schlom, “Nanoscale current transport in epitaxial SrTiO3 on n+-Si (001) investigated with conductive atomic force microscopy,” J. Vac. Sci. Technol. B 22, 2030 (2004).
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  85. H. Zhang, E. J. Miller, E. T. Yu, C. Poblenz, and J. S. Speck, “Measurement of polarization charge and conduction band offset at InxGa1-xN/GaN heterojunction interfaces,” Appl. Phys. Lett. 84, 4644 (2004).
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  86. H. Zhang, E. J. Miller, E. T. Yu, C. Poblenz, and J. S. Speck, “Analysis of interface electronic structure in InxGa1-xN/GaN heterostructures,” J. Vac. Sci. Technol. B 22, 2169 (2004).
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  87. B. S. Simpkins, E. T. Yu, U. Chowdhury, M. M. Wong, T. G. Zhu, D. W. Yoo, and R. D. Dupuis, “Local conductivity and surface photovoltage variations due to magnesium segregation in p-type GaN,” J. Appl. Phys. 95, 6225 (2004).
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  88. E. J. Miller, E. T. Yu, P. Waltereit, and J. S. Speck, “Analysis of reverse bias leakage current mechanisms in GaN grown by molecular beam epitaxy,” Appl. Phys. Lett. 84, 535 (2004).
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  89. E. J. Miller, D. M. Schaadt, E. T. Yu, X. L. Sun, L. J. Brillson, P. Waltereit, and J. S. Speck, “Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy,” J. Appl. Phys. 94, 7611 (2003).
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  90. B. S. Simpkins, E. T. Yu, P. Waltereit, and J. S. Speck, “Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride,” J. Appl. Phys. 94, 1448 (2003).
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  91. B. S. Simpkins and E. T. Yu, “Influence of AlN Buffer on Electronic Properties and Dislocation Microstructure of AlGaN/GaN Grown by Molecular Beam Epitaxy on SiC,” J. Vac. Sci. Technol. B 21, 1818 (2003).
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  92. P. A. Rosenthal, Y. Taur, and E. T. Yu, “Direct measurement and characterization of n+ super-halo implants in a 120 nm gate-length Si metal-oxide-semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy,” Appl. Phys. Lett. 81, 3993 (2002).
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  93. E. J. Miller, D. M. Schaadt, E. T. Yu, P. Waltereit, C. Poblenz, and J. S. Speck, “Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment,” Appl. Phys. Lett. 82, 1293 (2003).
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  94. D. M. Schaadt and E. T. Yu, “Scanning capacitance spectroscopy of an AlGaN/GaN heterostructure field-effect transistor: analysis of probe tip effects,” J. Vac. Sci. Technol. B 20, 1671 (2002).
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  95. E. J. Miller, E. T. Yu, C. Poblenz, C. Elsass, and J. S. Speck, “Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance-voltage carrier profiling,” Appl. Phys. Lett. 80, 3551 (2002).
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  96. S. L. Zuo, Y. G. Hong, C. W. Tu, E. T. Yu, and J. F. Klem, “Cross-sectional scanning tunneling microscopy of GaAsSb/GaAs quantum well structures,” J. Appl. Phys. 92, 3761 (2002).
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  97. B. S. Simpkins, D. M. Schaadt, E. T. Yu, and R. J. Molnar, “Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 91, 9924 (2002).
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  98. E. J. Miller, D. M. Schaadt, E. T. Yu, C. Poblenz, C. Elsass, and J. S. Speck, “Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope,” J. Appl. Phys. 91, 9821 (2002).
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  99. L. Jia, E. T. Yu, D. Keogh, S. S. Lau, P. M. Asbeck, P. Miraglia, A. Roskowski, and R. F. Davis, “Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures,” Appl. Phys. Lett. 79, 2916 (2001).
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  100. B. B. Maranville, A. L. Shapiro, F. Hellman, D. M. Schaadt, and E. T. Yu, “Miscut-angle dependence of perpendicular magnetic anisotropy in thin epitaxial CoPt3 films grown on vicinal MgO,” Appl. Phys. Lett. 81, 517 (2002).
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  101. E. J. Miller and E. T. Yu, “Influence of the dipole interaction energy on clustering in InxGa1-xN alloys,” Appl. Phys. Lett. 78, 2303 (2001).
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  102. D. M. Schaadt, E. J. Miller, E. T. Yu, and J. M. Redwing, “Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor structure,” J. Vac. Sci. Technol. B 19, 1671 (2001).
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  103. X. Z. Dang, E. T. Yu, E. J. Piner, and B. T. McDermott, “Influence of surface processing and passivation on carrier concentrations and transport properties in AlGaN/GaN heterostructures,” J. Appl. Phys. 90, 1357 (2001).
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  104. D. M. Schaadt, E. J. Miller, E. T. Yu, and J. M. Redwing, “Lateral variations in threshold voltage of an AlxGa1-xN/GaN heterostructure field-effect transistor,” Appl. Phys. Lett. 78, 88 (2001).
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  105. K. V. Smith, E. T. Yu, C. Elsass, B. Heying, and J. S. Speck, “Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy,” Appl. Phys. Lett. 79, 2749 (2001).
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  106. E. J. Miller, X. Z. Dang, and E. T. Yu, “Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors,” J. Appl. Phys. 88, 5951 (2000).
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  107. K. V. Smith, X. Z. Dang, E. T. Yu, and J. M. Redwing, “Charging effects in AlGaN/GaN heterostructures probed using scanning capacitance microscopy,” J. Vac. Sci. Technol. B 18, 2304 (2000).
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  108. E. J. Miller, X. Z. Dang, H. H. Wieder, P. M. Asbeck, E. T. Yu, G. J. Sullivan, and J. M. Redwing, “Trap characterization by gate-drain conductance and capacitance dispersion studies in an AlGaN/GaN HFET,” J. Appl. Phys. 87, 8070 (2000).
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  109. D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, “Characterization and analysis of a novel hybrid magnetoelectronic device for magnetic field sensing,” J. Vac. Sci. Technol. A 18, 1834 (2000).
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  110. D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, “Proximal probe characterization of nanoscale charge transport properties in Co/SiO2 multilayer structures,” J. Elec. Mater. 29, 1299 (2000).
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  111. K. V. Smith, E. T. Yu, J. M. Redwing, and K. S. Boutros, “Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy,” J. Elec. Mater. 29, 274 (2000).
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  112. P. A. Rosenthal, E. T. Yu, R. L. Pierson, and P. J. Zampardi, “Characterization of AlxGa1-xAs/GaAs heterojunction bipolar transistor structures using cross-sectional scanning force microscopy,” J. Appl. Phys. 87, 1937 (2000).
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  113. K. V. Smith, E. T. Yu, J. M. Redwing, and K. S. Boutros, “Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures,” Appl. Phys. Lett. 75, 2250 (1999).
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  114. D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, “A monolithic field-effect-transistor-amplified magnetic field sensor,” Appl. Phys. Lett. 75, 731 (1999).
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  115. P. M. Asbeck, E. T. Yu, S. S. Lau, W. Sun, X. Dang, and C. Shi, “Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBT’s,” Solid State Electronics 44, 211 (2000).
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  116. X. Z. Dang, P. M. Asbeck, E. T. Yu, G. J. Sullivan, M. Y. Chen, B. T. McDermott, K. S. Boutros, and J. M. Redwing, “Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor,” Appl. Phys. Lett. 74, 3890 (1999).
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  117. X. Z. Dang, R. J. Welty, D. Qiao, P. M. Asbeck, S. S. Lau, E. T. Yu, K. S. Boutros, and J. M. Redwing, “Fabrication and characterization of enhanced barrier AlGaN/GaN heterostructure field-effect transistor,” Electronics Letters 35, 602 (1999).
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  118. E. T. Yu, S. L. Zuo, W. G. Bi, C. W. Tu, A. A. Allerman, and R. M. Biefeld, “Nanometer-scale compositional structure in III-V semiconductor heterostructures characterized by scanning tunneling microscopy,” J. Vac. Sci. Technol. A 17, 2246 (1999).
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  119. E. T. Yu, P. M. Asbeck, S. S. Lau, X. Z. Dang, and G. J. Sullivan, “Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures,” J. Vac. Sci. Technol. B 17, 1742 (1999).
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  120. S. L. Zuo, E. T. Yu, A. A. Allerman, and R. M. Biefeld, “Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices,” J. Vac. Sci. Technol. B 17, 1781 (1999).
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  121. C. Shi, P. M. Asbeck, and E. T. Yu, “Piezoelectric polarization associated with dislocations in wurtzite GaN,” Appl. Phys. Lett. 74, 573 (1999).
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  122. C. H. Yun, N. W. Cheung, Y. Zheng, R. J. Welty, Z. F. Guan, K. V. Smith, P. M. Asbeck, E. T. Yu, and S. S. Lau, “Transfer of patterned ion-cut silicon layers,” Appl. Phys. Lett. 73, 2772 (1998).
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  123. D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, “Charge storage in Co nanoclusters embedded in SiO2 by scanning force microscopy,” Appl. Phys. Lett. 74, 472 (1999).
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  124. E. T. Yu, X. Z. Dang, L. S. Yu, D. Qiao, P. M. Asbeck, S. S. Lau, G. J. Sullivan, K. S. Boutros, and J. M. Redwing, “Schottky barrier engineering in III-V nitrides via the piezoelectric effect,” Appl. Phys. Lett. 73, 1880 (1998).
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  125. B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, J. W. Mayer, and C. C. Ahn, “Deep-level transient spectroscopy of Si/SiGeC heterostructures,” Appl. Phys. Lett. 73, 647 (1998).
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  126. X. Z. Dang, D. J. Qiao, C. D. Wang, L.S. Yu, S. S. Lau, E. T. Yu, and J. M. Redwing, “Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures,” Appl. Phys. Lett. 72, 2745 (1998).
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  127. E. T. Yu, S. L. Zuo, W. G. Bi, and C. W. Tu, “Cross-Sectional Scanning Tunneling Microscopy of Atomic-Scale Structure in Semiconductor Heterostructures,” Micron 30, 51 (1999).
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  128. S. L Zuo, W. G. Bi, C. W. Tu, and E. T. Yu, “A scanning tunneling microscopy study of atomic-scale clustering in InAsP/InP heterostructures,” Appl. Phys. Lett. 72, 2135 (1998).
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  129. C. D. Wang, L. S. Yu, S. S. Lau, E. T. Yu, W. Kim, A. Botchkarev, and H. Morkoc, “Deep level defects in n-type GaN grown by molecular-beam epitaxy,” Appl. Phys. Lett. 72, 1211 (1998).
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  130. S. L. Zuo, W. G. Bi, C. W. Tu, and E. T. Yu, “Atomic Scale Compositional Structure of InAsP/InP and InNAsP/InP Heterostructures Grown by Molecular-Beam Epitaxy,” J. Vac. Sci. Technol. B 16, 2395 (1998).
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  131. B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, A. E. Bair, J. W. Mayer, and C. C. Ahn, “Electronic Properties of Si/Si1-x-yGexCy Heterojunctions,” J. Vac. Sci. Technol. B 16, 1639 (1998).
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  132. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, “Measurement of Piezoelectrically Induced Charge in GaN/AlGaN Heterostructure Field-Effect Transistors,” Appl. Phys. Lett. 71, 2794 (1997).
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  133. A. Y. Lew, S. L. Zuo, E. T. Yu, D. H. Chow, and R. H. Miles, “Correlation Between Atomic-Scale Structure and Mobility Anisotropy in InAs/Ga1-xInxSb Superlattices,” Phys. Rev. B 57, 6534 (1998).
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  134. E. T. Yu, “Atomic-Scale Characterization of Semiconductor Heterostructures By Cross-Sectional Scanning Tunneling Microscopy,” MRS Bulletin 22, 22 (1997).
  135. E. T. Yu and S. J. Pennycook, “Nanoscale Characterization of Materials,” MRS Bulletin 22, 17 (1997).
  136. P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove, and J. M. Redwing, “Piezoelectric Charge Densities in AlGaN/GaN HFET’s,” Electronics Letters 33, 1230 (1997).
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  137. E. T. Yu, “Cross-Sectional Scanning Tunneling Microscopy,” Chemical Reviews 97, 1017 (1997).
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  138. B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, A. E. Bair, J. W. Mayer, and C. C. Ahn, “Measurement of Band Offsets in Si/Si1-xGex and Si1-x-yGexCy Heterojunctions,” J. Vac. Sci. Technol. B 15, 1108 (1997).
  139. Q. Z. Liu, L. Shen, K. V. Smith, E. T. Yu, S. S. Lau, N. R. Perkins, and T. F. Kuech, “Epitaxy of Al Films on GaN Studied by Reflection High Energy Electron Diffraction and Atomic Force Microscopy,” Appl. Phys. Lett. 70, 990 (1997).
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  140. A. Y. Lew, S.-L. Zuo, E. T. Yu, and R. H. Miles, “Anisotropy and Growth-Sequence Dependence of Atomic-Scale Interface Structure in InAs/Ga1-xInxSb Superlattices,” Appl. Phys. Lett. 70, 75 (1997).
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  141. E. T. Yu, “Nanoscale Characterization of Semiconductor Materials and Devices Using Scanning Probe Techniques,” Materials Science and Engineering Reports R17, 147 (1996).
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  142. Y.-H. Zhang, A. Y. Lew, E. T. Yu, and Y. Chen, “Microstructural Properties of InAs/InAs1-xSbx Superlattices and InAs1-xSbx Ordered Alloys Grown by Modulated Molecular Beam Epitaxy,” J. Cryst. Growth 175/176, 833 (1997).
  143. B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, A. Bair, and J. W. Mayer, “Band Offsets in Si/Si1-x-yGexCy Heterojunctions Measured by Admittance Spectroscopy,” Appl. Phys. Lett. 70, 3413 (1997).
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  144. A. Y. Lew, E. T. Yu, and Y.-H. Zhang, “Atomic-Scale Structure of InAs/InAsSb Superlattices Grown by Modulated Molecular-Beam Epitaxy,” J. Vac. Sci. Technol. B 14, 2940 (1996).
  145. A. Y. Lew, C. H. Yan, C. W. Tu, and E. T. Yu, “Characterization of Arsenide/Phosphide Heterostructure Interfaces Grown by Gas-Source Molecular-Beam Epitaxy,” Appl. Phys. Lett. 67, 932 (1995).
  146. E. T. Yu, K. Barmak, P. Ronsheim, M. B. Johnson, P. McFarland, and J.-M. Halbout, “Two-Dimensional Profiling of Shallow Junctions in Si Metal-Oxide-Semiconductor Structures Using Scanning Tunneling Spectroscopy and Transmission Electron Microscopy,” J. Appl. Phys. 79, 2115 (1996).
  147. C. H. Yan, A. Y. Lew, E. T. Yu, and C. W. Tu, “P2 Induced P/As Exchange on GaAs During Gas-Source Molecular-Beam Epitaxy Growth Interruption,” J. Cryst. Growth 164, 77 (1996).
  148. A. Y. Lew, C. H. Yan, C. W. Tu, and E. T. Yu, “Characterization of Arsenide/Phosphide Heterostructure Interfaces by Scanning Tunneling Microscopy,” Appl. Surf. Sci. 104, 522 (1996).
  149. A. Y. Lew, C. H. Yan, R. B. Welstand, J. T. Zhu, C. W. Tu, E. T. Yu, and P. K. L. Yu, “Interface Structure in Arsenide/Phosphide Heterostructures Grown by Gas-Source MBE and Low-Pressure MOVPE,” J. Elec. Mater. 26, 64 (1997).
  150. A. Y. Lew, E. T. Yu, D. H. Chow, and R. H. Miles, “Scanning Tunneling Microscopy of InAs/Ga1-xInxSb Superlattices,” Appl. Phys. Lett. 65, 201 (1994).
  151. M. W. Wang, J. F. Swenberg, M. C. Phillips, E. T. Yu, J. O. McCaldin, R. W. Grant, and T. C. McGill, “X-Ray Photoelectron Spectroscopy Measurement of Valence Band Offsets for Mg-Based Semiconductor Compounds,” Appl. Phys. Lett. 64, 3455 (1994).
  152. M. W. Wang, J. F. Swenberg, R. J. Miles, M. C. Phillips, E. T. Yu, J. O. McCaldin, R. W. Grant, and T. C. McGill, “Measurement of the MgSe/Cd0.54Zn0.46Se Valence Band Offset by X-ray Photoelectron Spectroscopy,” J. Cryst. Growth 138, 508 (1994).
  153. E. T. Yu, J. O. McCaldin, and T. C. McGill, “Band Offsets in Semiconductor Heterojunctions,” Solid State Phys. 46, 1 (1992).
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  154. M. W. Wang, M. C. Phillips, J. F. Swenberg, E. T. Yu, J. O. McCaldin, and T. C. McGill, “n-CdSe/p-ZnTe Based Wide Band-Gap Light Emitters – Numerical Simulation and Design,” J. Appl. Phys. 73, 4660 (1993).
  155. E. T. Yu, J.-M. Halbout, A. R. Powell, and S. S. Iyer, “Scanning Tunneling Microscopy and Spectroscopy of Si/SiGe (001) Superlattices,” Appl. Phys. Lett. 61, 3166 (1992).
  156. E. T. Yu, M. B. Johnson, A. R. Powell, J.-M. Halbout, and S. S. Iyer, “Scanning Tunneling Microscopy and Spectroscopy of Si-Based Heterostructures,” J. Vac. Sci. Technol. B 11, 1149 (1993).
  157. E. T. Yu, M. B. Johnson, V. P. Kesan, J.-M. Halbout, and S. S. Iyer, “Cross-Sectional Scanning Tunneling Microscopy of MBE-Grown Si p-n Junctions and Si/SiGe Superlattices,” J. Cryst. Growth 127, 435 (1993).
  158. R. M. Feenstra, E. T. Yu, J. M. Woodall, P. D. Kirchner, C. Lin, and G. D. Pettit, “Cross-Sectional Imaging and Spectroscopy of GaAs Doping Superlattices by Scanning Tunneling Microscopy,” Appl. Phys. Lett. 61, 795 (1992).
  159. E. T. Yu, M. B. Johnson, and J.-M. Halbout, “Electrical Profiling of Si (001) p-n Junctions by Scanning Tunneling Microscopy,” Appl. Phys. Lett. 61, 201 (1992).
  160. E. T. Yu, M. C. Phillips, D. H. Chow, D. A. Collins, M. W. Wang, J. O. McCaldin, and T. C. McGill, “Interfacial Reactions and Band Offsets in the AlSb/GaSb/ZnTe Material System,” Phys. Rev. B 46, 13379 (1992).
  161. D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, “Multiband Treatment of Quantum Transport in Interband Tunnel Devices,” Phys. Rev. B 45, 3583 (1992).
  162. D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, “Effect of Band Mixing on Hole Tunneling Times in GaAs/AlAs Double Barrier Heterostructures,” Phys. Rev. B 45, 3576 (1992).
  163. E. T. Yu, M. C. Phillips, J. O. McCaldin, and T. C. McGill, “Measurement of the CdSe/ZnTe Valence Band Offset by XPS,” J. Vac. Sci. Technol. B 9, 2233 (1991).
  164. D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, “Band Structure Effects on Interband Tunnel Structures,” J. Vac. Sci. Technol. B 9, 2405 (1991).
  165. E. T. Yu, D. A. Collins, D. Z.-Y. Ting, D. H. Chow, and T. C. McGill, “Demonstration of Resonant Transmission in InAs/GaSb/InAs Interband Tunneling Devices,” Appl. Phys. Lett. 57, 2675 (1990).
  166. D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, “The Role of Heavy-Hole States in Interband Tunnel Structures,” Appl. Phys. Lett. 58, 292 (1991).
  167. M. C. Phillips, E. T. Yu, Y. Rajakarunanayake, J. O. McCaldin, D. A. Collins, and T. C. McGill, “Characterization of CdSe/ZnTe Heterojunctions,” J. Cryst. Growth 111, 820 (1991).
  168. D. A. Collins, D. Z.-Y. Ting, D. H. Chow, E. T. Yu, J. R. Soderstrom, Y. Rajakarunanayake, and T. C. McGill, “Interband Tunneling in InAs/GaSb/AlSb Heterostructures,” J. Cryst. Growth 111, 664 (1991).
  169. D. Z.-Y. Ting, D. A. Collins, E. T. Yu, D. H. Chow, and T. C. McGill, “Large Peak Current Densities in Novel Resonant Interband Tunneling Heterostructures,” Appl. Phys. Lett. 57, 1257 (1990).
  170. D. A. Collins, E. T. Yu, Y. Rajakarunanayake, J. R. Soderstrom, D. Z.-Y. Ting, D. H. Chow, and T. C. McGill, “Experimental Observation of Negative Differential Resistance from an InAs/GaSb Interface,” Appl. Phys. Lett. 57, 683 (1990).
  171. D. A. Collins, D. H. Chow, D. Z.-Y. Ting, E. T. Yu, J. R. Soderstrom, and T. C. McGill, “Evidence for Coherent Interaction Between Quantum Well States in AlAs/GaAs Triple Barrier Heterostructures,” Superlattices and Microstructures 8, 455 (1990).
  172. E. T. Yu, E. T. Croke, D. H. Chow, D. A. Collins, M. C. Phillips, T. C. McGill, J. O. McCaldin, and R. H. Miles, “Measurement of the Valence Band Offset in Novel Heterojunction Systems: Si/Ge (100) and AlSb/ZnTe (100),” J. Vac. Sci. Technol. B 8, 908 (1990).
  173. D. Z.-Y. Ting, E. T. Yu, D. A. Collins, D. H. Chow, and T. C. McGill, “Modeling of Novel Heterojunction Tunnel Structures,” J. Vac. Sci. Technol. B 8, 810 (1990).
  174. D. H. Chow, E. T. Yu, J. R. Soderstrom, D. Z.-Y. Ting, and T. C. McGill, “Negative Differential Resistance Due to Resonant Interband Tunneling of Holes,” J. Appl. Phys. 68, 3744 (1990).
  175. J. R. Soderstrom, E. T. Yu, M. K. Jackson, Y. Rajakarunanayake, and T. C. McGill, “Two Band Modelling of Narrow Bandgap and Interband Tunneling Devices,” J. Appl. Phys. 68, 1372 (1990).
  176. E. T. Yu, E. T. Croke, T. C. McGill, and R. H. Miles, “Measurement of the Valence Band Offset in Strained Si/Ge (100) Heterojunctions by X-Ray Photoelectron Spectroscopy,” Appl. Phys. Lett. 56, 569 (1990).
  177. D. A. Collins, D. H. Chow, D. Z.-Y. Ting, E. T. Yu, J. R. Soderstrom, and T. C. McGill, “Large Peak-to-Valley Current Ratios in Triple Barrier Heterostructures,” Solid-State Electron. 32, 1095 (1989).
  178. E. T. Yu, D. H. Chow, and T. C. McGill, “Commutativity of the GaAs/AlAs (100) Valence Band Offset,” J. Vac. Sci. Technol. B 7, 391 (1989).
  179. E. T. Yu, M. K. Jackson, and T. C. McGill, “Hole Tunneling Times in GaAs/AlAs Double Barrier Heterostructures,” Appl. Phys. Lett. 55, 744 (1989).
  180. E. T. Yu, D. H. Chow, and T. C. McGill, “Commutativity of the GaAs/AlAs (100) Valence Band Offset,” Phys. Rev. B 38, 12764 (1988).
  181. E. T. Yu and T. C. McGill, “III-V/II-VI Double-Barrier Resonant Tunneling Structures,” Appl. Phys. Lett. 53, 60 (1988).